Navitas Semiconductor Corporation
Capital Structure
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in mil. unless spec.Working Capital
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in mil. unless spec.Quarterly Revenue
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in mil. unless spec.Quarterly Earnings Per Share
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in mil. unless spec.Company Description
- CEO
- Chris Allexandre
- Full Time Employees
- 190
- Sector
- Electronic technology
- Industry
- Semiconductors
- Address
- 3520 Challenger Street Torrance CA United States 90503-1640
- IPO Date
- Dec 3, 2020
- CIK
- 0001821769
- Website
- navitassemi.com
- Similar Companies
- Business
- Navitas Semiconductor Corporation (Nasdaq: NVTS), founded in 2014 and headquartered in Torrance, California, designs and markets next-generation gallium nitride (GaN) and silicon carbide (SiC) power semiconductors that deliver superior efficiency, power density, and performance over traditional silicon solutions. The company offers GaNFast power ICs integrating GaN power FETs with drive, control, sensing, and protection for fast chargers, consumer electronics, data centers, solar inverters, electric vehicles, and home appliances; GeneSiC high-voltage SiC MOSFETs, diodes, and power modules including Gen-3 Fast SiC, trench-assisted planar technology, and automotive-qualified devices up to 3300V for EV chargers, industrial, energy storage, and grid infrastructure; GaNSafe rugged ICs with advanced protection; GaNSense motor drive and control ICs; GaNSlim high-efficiency power ICs; and SiCPAK modules with epoxy-resin potting for high-reliability applications. Navitas operates globally with manufacturing outsourced to partners including TSMC, PSMC, and GlobalFoundries, serving markets in mobile, consumer, EV, AI data centers, solar, industrial, and energy sectors. Recent developments include a November 2025 partnership with GlobalFoundries to accelerate U.S. GaN production for AI datacenters and critical power; a strategic distribution alliance with WT Microelectronics consolidating Asian operations; a $100 million private placement in November 2025 to fund Navitas 2.0 high-power strategy; support for NVIDIA's 800V HVDC AI factory architecture with new 100V GaN FETs and high-voltage SiC; appointment of Chris Allexandre as President and CEO; plans for 200mm GaN production with PSMC; and launches of 3300V/2300V UHV SiC portfolio, 12kW GaN/SiC platforms achieving 97.8% efficiency, and automotive AEC-qualified SiC MOSFETs.
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